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study of nanowire characteristics of a junctionless transistor depending on the gate length

descriptionPublicationkeyboard_double_arrow_right Conference object , Article 24 Jun 2021Publisher:IEEEJournal:2021 28th International Conference on Mixed Design of Integrated Circuits and SystemFunded by:EC | RADICAL

Authors: Rusev, Rostislav; Angelov, George; Ruskova, Ivelina; Gieva, Elitsa; Nikolov, Dimitar; Spasova, Mariya; Hristov, Marin; +1 Authors

doi: 10.23919/mixdes52406.2021.9497541

study of nanowire characteristics of a junctionless transistor depending on the gate length

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Abstract

Channel length influence on the nanowire parameters and characteristics at different gate voltages for applications in junctionless transistors (JLTs) are analyzed. The density-gradient effective mass tensor of the charge carriers is studied. The results obtained are used to indicate a compromise between performance and minimum dimensions for JLT sensor applications.

Related Organizations

Technical University of Sofia
Bulgaria

Keywords

3D TCAD structure model, radical, nanowire, air sensor, atmospheric radicals, junctionless transistor, air quality monitoring, environmental monitoring

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