publication . Article . 2021

Схема элемента Пельтье на полупроводниках с прыжковым переносом электронов по дефектам

Poklonski, N. A.; Vyrko, S. A.; Kovalev, A. I.; Anikeev, I. I.; Gorbachuk, N. I.;
Open Access
  • Published: 19 Mar 2021 Journal: Devices and Methods of Measurements, volume 12, pages 13-22 (issn: 2220-9506, eissn: 2414-0473, Copyright policy)
  • Publisher: Belarusian National Technical University
  • Country: Belarus
Abstract
The study of thermoelectric properties of crystalline semiconductors with structural defects is of practical interest in the development of radiation-resistant Peltier elements. In this case, the spectrum of energy levels of hydrogen-like impurities and intrinsic point defects in the band gap (energy gap) of crystal plays an important role.The purpose of this work is to analyze the features of the single-electron band model of semiconductors with hopping electron migration both via atoms of hydrogen-like impurities and via their own point triplecharged intrinsic defects in the c- and v-bands, as well as to search for the possibility of their use in the Peltier e...
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