publication . Article . 2016


Adamchuck, D. V.; Ksenevich, V. K.; Gorbachuk, N. I.; Shimanskij, V. I.;
Open Access English
  • Published: 01 Dec 2016 Journal: Pribory i Metody Izmerenij, volume 7, issue 3, pages 312-321 (issn: 2220-9506, eissn: 2414-0473, Copyright policy)
  • Publisher: Belarusian National Technical University
The aim of this work is the analysis of the influence of annealing in an inert atmosphere on the electrical properties and structure of non-stoichiometric tin dioxide films by means of impedance spectroscopy method. Non-stoichiometric tin dioxide films were fabricated by two-step oxidation of metallic tin deposited on the polycrystalline Al 2 O 3 substrates by DC magnetron sputtering. In order to modify the structure and stoichiometric composition, the films were subjected to the high temperature annealing in argon atmosphere in temperature range 300–800 °С. AC-conductivity measurements of the films in the frequency range 20 Hz – 2 MHz were carried out. Variatio...
Persistent Identifiers
free text keywords: impedance spectroscopy, nonstoichiometric tin dioxide films, high-temperature annealing, x-ray diffraction analysis, lcsh:Engineering (General). Civil engineering (General), lcsh:TA1-2040, Materials science, Crystallite, Tin, chemistry.chemical_element, chemistry, Dielectric spectroscopy, Crystallography, Annealing (metallurgy), Sputter deposition, Inert gas, Tin dioxide, chemistry.chemical_compound, Atmospheric temperature range, Analytical chemistry
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