This paper presents the design and construction of an Indirect Matrix Converter (IMC) utilizing newly available IGBTs with reverse voltage blocking capability (RB-IGBTs). The design process involves the characterization of the RB-IGBTs by measuring the on-state parameters and the switching behavior in the rectifier stage of an IMC topology. Based on analytical equations the semiconductor losses are calculated and are used to perform the thermal design and simulation of the cooling system. Experimental measurements demonstrate that the designed IMC is capable of generating sinusoidal input and output currents and that the RB-IGBTs ensure low rectifier stage conduction losses and/or high IMC power conversion efficiency.