High Operating Temperature Midwave Infrared InAs/GaSb Superlattice Photodetectors on (111) GaSb Substrates

descriptionPublicationkeyboard_double_arrow_right Article 01 Mar 2013Publisher:Institute of Electrical and Electronics Engineers (IEEE)Journal:IEEE Electron Device Letters, volume 34, pages 426-428 (issn: 0741-3106, eissn: 1558-0563,

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Authors: E. Plis; B. Klein; S. Myers; N. Gautam; E. P. Smith; S. Krishna;

doi: 10.1109/led.2012.2236534

High Operating Temperature Midwave Infrared InAs/GaSb Superlattice Photodetectors on (111) GaSb Substrates

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Abstract

We report on the detailed radiometric characterization of midwave infrared (MWIR) (100% cutoff wavelength, i.e., λ100%, was 5.6 μm at 295 K) InAs/GaSb type-II strained layer superlattice (T2SL) detectors grown on the GaSb (111) substrate. At 295 K and 4 μm, a dark current density Jd of 0.53 A/cm2 (at -50 mV) and specific detectivity D* = 8.5 × 109 Jones (at 0 V) were demonstrated, which are superior values to the state-of-the-art MWIR T2SL detectors with the same (p-i-n) design grown on conventional GaSb (100) substrates.

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