Development of substrate integrated waveguide power dividers

descriptionPublicationkeyboard_double_arrow_right Article , Conference object 03 Jun 2004 Canada Publisher:IEEEJournal:CCECE 2003 - Canadian Conference on Electrical and Computer Engineering. Toward a Caring and Humane Technology (Cat. No.03CH37436), volume 3, pages 1,921-1,924

Authors: S. Germain; D. Deslandes; K. Wu;

doi: 10.1109/ccece.2003.1226289

Development of substrate integrated waveguide power dividers

- Summary
- Metrics

Abstract

Two classes of substrate integrated waveguide (SIW) power divider are presented, namely, Y- and T-types. Using arrays of via, the SIW power dividers and microstrip transitions are integrated on the same substrate. Design models are presented respectively for the Y- and T-junctions. Experimental results over the Ka band are given for both structures. The Y-junction shows a bandwidth of 25.2% at -18.5 dB while the T-junction shows a bandwidth of 10.2% at -19.0 dB.

Country

Canada

Related Organizations

Polytechnique Montréal
Canada
École Normale Supérieure
France

Impact byBIP!

	selected citations These citations are derived from selected sources. This is an alternative to the "Influence" indicator, which also reflects the overall/total impact of an article in the research community at large, based on the underlying citation network (diachronically).	120
	popularity This indicator reflects the "current" impact/attention (the "hype") of an article in the research community at large, based on the underlying citation network.	Top 10%
	influence This indicator reflects the overall/total impact of an article in the research community at large, based on the underlying citation network (diachronically).	Top 1%
	impulse This indicator reflects the initial momentum of an article directly after its publication, based on the underlying citation network.	Top 10%