Semiconductor lithography for the next millennium

descriptionPublicationkeyboard_double_arrow_right Article 01 Apr 1996Publisher:Institute of Electrical and Electronics Engineers (IEEE)Journal:IEEE Spectrum, volume 33, pages 33-38 (issn: 0018-9235, eissn: 1939-9340,

Copyright policy )

Authors: L. Geppert;

doi: 10.1109/6.486632

Semiconductor lithography for the next millennium

- Summary
- Metrics

Abstract

Volume production of ICs sporting 0.1-micrometer structures is being predicted for 2007. Manufacturing tools now being developed will feature much shorter wavelengths and elaborate mirrors in place of traditional lenses. Also being honed is proximity X-ray lithography, which has produced a first level of a memory circuit with 0.25-micrometer dimensions.

Impact byBIP!

	selected citations These citations are derived from selected sources. This is an alternative to the "Influence" indicator, which also reflects the overall/total impact of an article in the research community at large, based on the underlying citation network (diachronically).	31
	popularity This indicator reflects the "current" impact/attention (the "hype") of an article in the research community at large, based on the underlying citation network.	Top 10%
	influence This indicator reflects the overall/total impact of an article in the research community at large, based on the underlying citation network (diachronically).	Top 10%
	impulse This indicator reflects the initial momentum of an article directly after its publication, based on the underlying citation network.	Top 10%