Electroluminescence as internal light source for measurement of the photonic strength of random porous GaP

descriptionPublicationkeyboard_double_arrow_right Article 10 May 2004 Netherlands English Publisher:AIP PublishingJournal:Applied Physics Letters, volume 84, pages 3,852-3,854 (issn: 0003-6951, eissn: 1077-3118,

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Authors: van Driel, A.F.; Vanmaekelbergh, D.A.M.; Kelly, J.J.;

doi: 10.1063/1.1748839

Electroluminescence as internal light source for measurement of the photonic strength of random porous GaP

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Abstract

During porous etching of GaP, electroluminescence ranging from the ultraviolet to the near-infrared is generated at the interface of the porous and the nonporous layer. This is used to measure the wavelength-dependent transmission of light through porous layers in a wide thickness range. Two types of porous structures, characterized by different pore sizes, were studied. The transmission of the emitted light gives valuable information about wavelength-dependent diffusion of light through porous GaP.

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Netherlands

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Utrecht University
Netherlands

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