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GaAs nanowires on Si nanopillars: towards large scale, phase-engineered arrays.

descriptionPublicationkeyboard_double_arrow_right Article 01 Jan 2022 Switzerland Publisher:Royal Society of Chemistry (RSC)Journal:Nanoscale Horizons, volume 7, pages 211-219 (issn: 2055-6756, eissn: 2055-6764,

Authors: Lucas Güniat; Lea Ghisalberti; Li Wang; Christian Dais; Nicholas Morgan; Didem Dede; Wonjong Kim; +6 Authors

doi: 10.1039/d1nh00553g

pmid: 35040457

pmc: PMC8802830

GaAs nanowires on Si nanopillars: towards large scale, phase-engineered arrays.

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Abstract

Understanding key parameters for III–V nanowire growth on SiO2/Si nanopillars, and using them to grow large-scale arrays by phase-shift lithography and/or deep ultraviolet (DUV) stepper lithography.

Country

Switzerland

Related Organizations

École Polytechnique
France
Institute for Physics
United States
Massachusetts Institute of Technology
United States
University of Applied Sciences and Arts Northwestern Switzerland
Switzerland
École Polytechnique Fédérale de Lausanne EPFL
Switzerland

Keywords

Chemistry, solar-cells, oxidation, silicon, fabrication, contact-angle, contact-angle solar-cells oxidation silicon fabrication

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	citations This is an alternative to the "Influence" indicator, which also reflects the overall/total impact of an article in the research community at large, based on the underlying citation network (diachronically).	4
	popularity This indicator reflects the "current" impact/attention (the "hype") of an article in the research community at large, based on the underlying citation network.	Top 10%
	influence This indicator reflects the overall/total impact of an article in the research community at large, based on the underlying citation network (diachronically).	Average
	impulse This indicator reflects the initial momentum of an article directly after its publication, based on the underlying citation network.	Average