Plasma Nitridation of Metal Oxides

Joel D. Houmes; Hans-Conrad zur Loye

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Chemistry of Materials

Article . 1996 . Peer-reviewed

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https://dx.doi.org/10.1021/cm9...

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Plasma Nitridation of Metal Oxides

descriptionPublicationkeyboard_double_arrow_right Article 01 Jan 1996 English Publisher:American Chemical Society (ACS)Journal:Chemistry of Materials, volume 8, pages 2,551-2,553 (issn: 0897-4756, eissn: 1520-5002,

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Authors: Joel D. Houmes; Hans-Conrad zur Loye;

doi: 10.1021/cm960384l

Plasma Nitridation of Metal Oxides

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Abstract

Three binary nitride materials (TiN, AlN, and GaN) were prepared by reaction of a microwave generated nitrogen/hydrogen plasma with TiO2, Al(OH)3, and Ga2O3, respectively. Using this plasma, even l...

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Massachusetts Institute of Technology
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