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https://dx.doi.org/10.48550/ar...
Article . 2009
License: arXiv Non-Exclusive Distribution
Data sources: Datacite
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Radiation tolerance of CMOS monolithic active pixel sensors with self-biased pixels

Authors: Deveaux, M.; Amar-Youcef, S.; Besson, A.; Claus, G.; Colledani, C.; Dorokhov, M.; Dritsa, C.; +14 Authors

Radiation tolerance of CMOS monolithic active pixel sensors with self-biased pixels

Abstract

CMOS Monolithic Active Pixel Sensors (MAPS) are proposed as a technology for various vertex detectors in nuclear and particle physics. We discuss the mechanisms of ionizing radiation damage on MAPS hosting the the dead time free, so-called self bias pixel. Moreover, we discuss radiation hardened sensor designs which allow operating detectors after exposing them to irradiation doses above 1 Mrad

Keywords

Physics - Instrumentation and Detectors, FOS: Physical sciences, Instrumentation and Detectors (physics.ins-det), Nuclear Experiment (nucl-ex), Nuclear Experiment

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selected citations
These citations are derived from selected sources.
This is an alternative to the "Influence" indicator, which also reflects the overall/total impact of an article in the research community at large, based on the underlying citation network (diachronically).
BIP!Citations provided by BIP!
popularity
This indicator reflects the "current" impact/attention (the "hype") of an article in the research community at large, based on the underlying citation network.
BIP!Popularity provided by BIP!
influence
This indicator reflects the overall/total impact of an article in the research community at large, based on the underlying citation network (diachronically).
BIP!Influence provided by BIP!
impulse
This indicator reflects the initial momentum of an article directly after its publication, based on the underlying citation network.
BIP!Impulse provided by BIP!
9
Average
Top 10%
Average
Green
bronze