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Nanolithography with metastabile helium

descriptionPublicationkeyboard_double_arrow_right Article 01 Aug 1996 English Publisher:Springer Science and Business Media LLCJournal:Applied Physics B Laser and Optics, volume 63, pages 203-205 (issn: 0946-2171, eissn: 1432-0649,

Authors: Tilman Pfau; J. Mlynek; S. Nowak;

doi: 10.1007/bf01095274

Nanolithography with metastabile helium

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Abstract

We have used a self-assembling monolayer of dodecanethiole molecules as the resist for a lithography technique based on a beam of metastable helium atoms. Doses as low as 3 metastable helium atoms per 10 molecules are enough to write patterns into this resist. An edge resolution of 30 nanometers is demonstrated. The writing mechanism is based on the damage of the resist due to Penning ionization.

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University of Konstanz
Germany

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