publication . Other literature type . Conference object . 2001

Vertical cavity surface emitting laser for operation at 1.5 um with integral AlGaInAs/InP Bragg mirrors

M. Linnik; A. Christou;
  • Published: 01 Jan 2001
  • Publisher: Alma Mater Studiorum - Università di Bologna
  • Country: Italy
Abstract
The design and performance of a low threshold selectively oxidized vertical cavity surface emitting laser (VCSEL) fabricated for operation at a wavelength of 1.55/spl mu/m is based on III-V quaternary semiconductor alloys and is grown by molecular beam epitaxy. Experimentally, the average threshold current measured for this design, with a 7/spl mu/m device was 3mA. The comparison of the above parameters and calculations with other reported experimental results for the VCSELs lasing at 1.55/spl mu/m showed that devices with strained MQW perform slightly better than the investigated laser, they have lower threshold current densities and transparency current densit...
Subjects
free text keywords: ING-INF/01 Elettronica, Indium phosphide, chemistry.chemical_compound, chemistry, Semiconductor laser theory, Optoelectronics, business.industry, business, Lasing threshold, Current density, Optics, Physics, Laser, law.invention, law, Vertical-cavity surface-emitting laser, Molecular beam epitaxy, Gallium arsenide
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publication . Other literature type . Conference object . 2001

Vertical cavity surface emitting laser for operation at 1.5 um with integral AlGaInAs/InP Bragg mirrors

M. Linnik; A. Christou;