publication . Conference object . Other literature type . 1999

Does radiation improve silicon detectors?

Bloch, P; Cheremuhin, A E; Golutvin, I A; Peisert, Anna; Zamiatin, N I;
Open Access
  • Published: 05 Nov 1999
  • Publisher: IEEE
Abstract
Sensors designed for the CMS preshower detector were irradiated with protons and neutrons to fluences equivalent up to 2/spl times/10/sup 14/ n/cm/sup 2/. The leakage current and the capacitance as well as the charge collection efficiency and the noise were measured, before and after the irradiation, for most of the detectors. We noticed, that for some detectors of a lower quality, the breakdown voltage increases after type inversion and that their leakage current, charge collection efficiency and noise are comparable to good detectors. We explain this phenomenon by two effects: a change of the distribution of the electric field and a decrease of the carrier lif...
Subjects
arXiv: Physics::Instrumentation and Detectors
free text keywords: Detectors and Experimental Techniques, Space charge, Carrier lifetime, Leakage (electronics), Physics, Particle detector, Optics, business.industry, business, Electronic engineering, Optoelectronics, Breakdown voltage, Electric field, Charge carrier, Capacitance
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publication . Conference object . Other literature type . 1999

Does radiation improve silicon detectors?

Bloch, P; Cheremuhin, A E; Golutvin, I A; Peisert, Anna; Zamiatin, N I;