publication . Article . 2014

Characterization of the Gain Dependence on Temperature in Silicon Photomultipliers

Cvach, J; Eigen, G; Kvasnicka, J; Polak, I; Van der Kraaij, E; Zalieckas, J;
Open Access English
  • Published: 01 Jan 2014
We present a study of the gain dependence on temperature in several different silicon photomultipliers. This work was motivated by the goal to determine design options for an power supply regulator that has the capability to adjust the bias voltage with changing temperature to keep the gain constant. In this note, we report on results of silicon photomultipliers produced by CPTA, Hamamatsu and KETEK. Finally we also present first results with a gain-stabilizing electronics board.
free text keywords: Detectors and Experimental Techniques, Advanced infrastructures for detector R&D [9], Highly Granular Calorimetry [9.5]
Funded by
Advanced European Infrastructures for Detectors at Accelerators
  • Funder: European Commission (EC)
  • Project Code: 262025
  • Funding stream: FP7 | SP4 | INFRA
Download from
Powered by OpenAIRE Open Research Graph
Any information missing or wrong?Report an Issue