Photon-gated spin transistor

Preprint English OPEN
Li, Fan ; Song, Cheng ; Cui, Bin ; Peng, Jingjing ; Gu, Youdi ; Wang, Guangyue ; Pan, Feng (2017)
  • Related identifiers: doi: 10.1002/adma.201604052
  • Subject: Condensed Matter - Materials Science
    arxiv: Physics::Optics | Condensed Matter::Strongly Correlated Electrons | Condensed Matter::Materials Science | Computer Science::Emerging Technologies | Condensed Matter::Mesoscopic Systems and Quantum Hall Effect

Spin-polarized field-effect transistor (spin-FET), where a dielectric layer is generally employed for the electrical gating as the traditional FET, stands out as a seminal spintronic device under the miniaturization trend of electronics. It would be fundamentally transformative if optical gating was used for spin-FET. We report a new type of spin-polarized field-effect transistor (spin-FET) with optical gating, which is fabricated by partial exposure of the (La,Sr)MnO3 channel to light-emitting diode (LED) light. The manipulation of the channel conductivity is ascribed to the enhanced scattering of the spin-polarized current by photon-excited antiparallel aligned spins. And the photon-gated spin-FET shows strong light power dependence and reproducible enhancement of resistance under light illumination, indicting well-defined conductivity cycling features. Our finding would enrich the concept of spin-FET and promote the use of optical means in spintronics for low power consumption and ultrafast data processing.
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