publication . Preprint . Article . 2017

Photon‐Gated Spin Transistor

Fan Li; Cheng Song; Bin Cui; Jingjing Peng; Youdi Gu; Guangyue Wang; Feng Pan;
Open Access English
  • Published: 03 Mar 2017
Abstract
Spin-polarized field-effect transistor (spin-FET), where a dielectric layer is generally employed for the electrical gating as the traditional FET, stands out as a seminal spintronic device under the miniaturization trend of electronics. It would be fundamentally transformative if optical gating was used for spin-FET. We report a new type of spin-polarized field-effect transistor (spin-FET) with optical gating, which is fabricated by partial exposure of the (La,Sr)MnO3 channel to light-emitting diode (LED) light. The manipulation of the channel conductivity is ascribed to the enhanced scattering of the spin-polarized current by photon-excited antiparallel aligne...
Subjects
arXiv: Computer Science::Emerging TechnologiesCondensed Matter::Mesoscopic Systems and Quantum Hall EffectCondensed Matter::Materials ScienceCondensed Matter::Strongly Correlated ElectronsPhysics::Optics
free text keywords: Condensed Matter - Materials Science, Miniaturization, Gating, Optoelectronics, business.industry, business, Diode, Spin transistor, Spintronics, Optical transistor, Ultrashort pulse, Materials science, Transistor, law.invention, law
Related Organizations
Powered by OpenAIRE Open Research Graph
Any information missing or wrong?Report an Issue
publication . Preprint . Article . 2017

Photon‐Gated Spin Transistor

Fan Li; Cheng Song; Bin Cui; Jingjing Peng; Youdi Gu; Guangyue Wang; Feng Pan;