Low-temperature ballistic transport in nanoscale epitaxial graphene cross junctions

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Weingart, S. ; Bock, C. ; Kunze, U. ; Speck, F. ; Seyller, Th. ; Ley, L. (2009)
  • Related identifiers: doi: 10.1063/1.3276560
  • Subject: Condensed Matter - Mesoscale and Nanoscale Physics | Condensed Matter - Materials Science | Condensed Matter - Other Condensed Matter

We report on the observation of inertial-ballistic transport in nanoscale cross junctions fabricated from epitaxial graphene grown on SiC(0001). Ballistic transport is indicated by a negative bend resistance of R12,43 ~ 170 ohm which is measured in a non-local, four-terminal configuration at 4.2 K and which vanishes as the temperature is increased above 80 K.
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