publication . Article . Preprint . 2014

Unveiling the structural origin of the high carrier mobility of a molecular monolayer on boron nitride

Rui Xu;
Open Access
  • Published: 12 Dec 2014 Journal: Physical Review B, volume 90 (issn: 1098-0121, eissn: 1550-235X, Copyright policy)
  • Publisher: American Physical Society (APS)
Abstract
Very recently, it was demonstrated that the carrier mobility of a molecular monolayer dioctylbenzothienobenzothiophene (C8-BTBT) on boron nitride can reach 10 cm2/Vs, the highest among the previously reported monolayer molecular field-effect transistors. Here we show that the high-quality single crystal of the C8-BTBT monolayer may be the key origin of the record-high carrier mobility. We discover that the C8-BTBT molecules prefer layer-by-layer growth on both hexagonal boron nitride and graphene. The flatness of these substrates substantially decreases the C8-BTBT nucleation density and enables repeatable growth of large-area single crystal of the C8-BTBT monol...
Subjects
free text keywords: Chemical physics, Crystal growth, Molecular film, Boron nitride, chemistry.chemical_compound, chemistry, Epitaxy, Monolayer, Physics, Single crystal, Electron mobility, Condensed matter physics, Graphene, law.invention, law, Nanotechnology, Condensed Matter - Materials Science, Condensed Matter - Mesoscale and Nanoscale Physics
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publication . Article . Preprint . 2014

Unveiling the structural origin of the high carrier mobility of a molecular monolayer on boron nitride

Rui Xu;