Inhomogeneity in barrier height at graphene/Si (GaAs) Schottky junctions

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Tomer, D.; Rajput, S.; Hudy, L. J.; Li, C. H.; Li, L.;
(2015)

Graphene interfaced with a semiconductor forms a Schottky junction with rectifying properties, however, fluctuations in the Schottky barrier height are often observed. In this work, Schottky junctions are fabricated by transferring chemical vapor deposited monolayer gra... View more
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