Experimental realization of a silicon spin field-effect transistor

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Huang, Biqin ; Monsma, Douwe J. ; Appelbaum, Ian (2007)
  • Related identifiers: doi: 10.1063/1.2770656
  • Subject: Condensed Matter - Other Condensed Matter | Condensed Matter - Materials Science
    arxiv: Condensed Matter::Strongly Correlated Electrons

A longitudinal electric field is used to control the transit time (through an undoped silicon vertical channel) of spin-polarized electrons precessing in a perpendicular magnetic field. Since an applied voltage determines the final spin direction at the spin detector and hence the output collector current, this comprises a spin field-effect transistor. An improved hot-electron spin injector providing ~115% magnetocurrent, corresponding to at least ~38% electron current spin polarization after transport through 10 microns undoped single-crystal silicon, is used for maximum current modulation.
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