publication . Preprint . Article . 2013

Large Current Modulation and Spin-Dependent Tunneling of Vertical Graphene/MoS2 Heterostructures

Nojoon Myoung; Kyungchul Seo; Seung Joo Lee; G. Ihm;
Open Access English
  • Published: 25 Jul 2013
Abstract
Vertical graphene heterostructures have been introduced as an alternative architecture for electronic devices by using quantum tunneling. Here, we present that the current on/off ratio of vertical graphene field-effect transistors is enhanced by using an armchair graphene nanoribbon as an electrode. Moreover, we report spin-dependent tunneling current of the graphene/MoS2 heterostructures. When an atomically thin MoS2 layer sandwiched between graphene electrodes becomes magnetic, Dirac fermions with different spins feel different height of the tunnel barrier, leading to spin-dependent tunneling. Our finding will develop the present graphene heterostructures for ...
Subjects
arXiv: Condensed Matter::Mesoscopic Systems and Quantum Hall EffectPhysics::Atomic and Molecular ClustersPhysics::Chemical PhysicsCondensed Matter::OtherPhysics::Optics
free text keywords: Condensed Matter - Mesoscale and Nanoscale Physics, General Engineering, General Physics and Astronomy, General Materials Science, Spintronics, Field-effect transistor, Bilayer graphene, Graphene nanoribbons, Heterojunction, Dirac fermion, symbols.namesake, symbols, Graphene, law.invention, law, Quantum tunnelling, Materials science, Condensed matter physics
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publication . Preprint . Article . 2013

Large Current Modulation and Spin-Dependent Tunneling of Vertical Graphene/MoS2 Heterostructures

Nojoon Myoung; Kyungchul Seo; Seung Joo Lee; G. Ihm;