publication . Article . Other literature type . Preprint . 2016

Trap Assisted Tunneling and Its Effect on Subthreshold Swing of Tunnel FETs

Sajjad, Redwan N.; Chern, Winston; Hoyt, Judy L.; Antoniadis, Dimitri A.;
Open Access
  • Published: 21 Mar 2016 Journal: IEEE Transactions on Electron Devices, volume 63, pages 4,380-4,387 (issn: 0018-9383, eissn: 1557-9646, Copyright policy)
  • Publisher: Institute of Electrical and Electronics Engineers (IEEE)
  • Country: United States
Abstract
National Science Foundation (U.S.). Nano-Engineered Electronic Device Simulation (Grant 1227020-EEC)
Subjects
free text keywords: Electrical and Electronic Engineering, Electronic, Optical and Magnetic Materials, Observable, Physics, Electronic engineering, Leakage (electronics), Subthreshold swing, Phonon, Quantum tunnelling, Logic gate, Electric field, Electrostatics, Condensed Matter - Mesoscale and Nanoscale Physics
Funded by
NSF| Center for Energy Efficient Electronics Science (Center for E3S)
Project
  • Funder: National Science Foundation (NSF)
  • Project Code: 0939514
  • Funding stream: Directorate for Engineering | Division of Electrical, Communications & Cyber Systems
,
NSF| Network for Computational Nanotechnology - NEEDS Node
Project
  • Funder: National Science Foundation (NSF)
  • Project Code: 1227020
  • Funding stream: Directorate for Engineering | Division of Engineering Education & Centers
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publication . Article . Other literature type . Preprint . 2016

Trap Assisted Tunneling and Its Effect on Subthreshold Swing of Tunnel FETs

Sajjad, Redwan N.; Chern, Winston; Hoyt, Judy L.; Antoniadis, Dimitri A.;