Trap Assisted Tunneling and Its Effect on Subthreshold Swing of Tunnel FETs

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Sajjad, Redwan Noor; Chern, Winston; Hoyt, Judy L; Antoniadis, Dimitri A;
  • Publisher: Institute of Electrical and Electronics Engineers (IEEE)
  • Related identifiers: doi: 10.1109/TED.2016.2603468
  • Subject: Condensed Matter - Mesoscale and Nanoscale Physics

We provide a detailed study of the oxide- semiconductor interface trap assisted tunneling (TAT) mechanism in tunnel FETs to show how it contributes a major leakage current path before the band-to-band tunneling (BTBT) is initiated. With a modified Shockley-Read-Hall for... View more
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