Theory of Doping and Defects in III-V Nitrides

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van de Walle, Chris G.; Stampfl, Catherine; Neugebauer, Joerg;
(1998)

Doping problems in GaN and in AlGaN alloys are addressed on the basis of state-of-the-art first-principles calculations. For n-type doping we find that nitrogen vacancies are too high in energy to be incorporated during growth, but silicon and oxygen readily form donors... View more
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