Voltage and temperature dependence of the grain boundary tunneling magnetoresistance in manganites

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Hoefener, C.; Philipp, J. B.; Klein, J.; Alff, L.; Marx, A.; Buechner, B.; Gross, R.;
(2000)
  • Related identifiers: doi: 10.1209/epl/i2000-00324-1
  • Subject: Condensed Matter - Strongly Correlated Electrons
    arxiv: Condensed Matter::Materials Science | Condensed Matter::Superconductivity | Condensed Matter::Mesoscopic Systems and Quantum Hall Effect

We have performed a systematic analysis of the voltage and temperature dependence of the tunneling magnetoresistance (TMR) of grain boundaries (GB) in the manganites. We find a strong decrease of the TMR with increasing voltage and temperature. The decrease of the TMR w... View more
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