Voltage and temperature dependence of the grain boundary tunneling magnetoresistance in manganites

Preprint English OPEN
Hoefener, C.; Philipp, J. B.; Klein, J.; Alff, L.; Marx, A.; Buechner, B.; Gross, R.;
  • Related identifiers: doi: 10.1209/epl/i2000-00324-1
  • Subject: Condensed Matter - Strongly Correlated Electrons
    arxiv: Condensed Matter::Materials Science | Condensed Matter::Superconductivity | Condensed Matter::Mesoscopic Systems and Quantum Hall Effect

We have performed a systematic analysis of the voltage and temperature dependence of the tunneling magnetoresistance (TMR) of grain boundaries (GB) in the manganites. We find a strong decrease of the TMR with increasing voltage and temperature. The decrease of the TMR w... View more
  • References (25)
    25 references, page 1 of 3

    [1] M. Julli`ere, Phys. Lett. A 54, 225 (1995).

    [2] J. S. Moodera, L. R. Kinder, T. M. Wong, R. Meservey, Phys. Rev. Lett. 74, 3273 (1995).

    [3] S. S. P. Parkin et al., J. Appl. Phys. 85, 5828 (1999); see also J. Appl. Phys. 81, 5521 (1997) and Science 281, 797 (1998).

    [4] M. Viret, M. Drouet, J. Nassar, J. P. Contour, C. Fermon, A. Fert, Europhys. Lett. 39, 545 (1997).

    [5] T. Obata, T. Manako, Y. Shimakawa, Y. Kubo, Appl. Phys. Lett. 74, 290 (1999).

    [6] M. K. Gubkin, T. M. Perekalina, A. V. Bykov, and V. A. Chubarenko, Phys. Solid State 35, 728 (1993).

    [7] H. Hwang, S.-W. Cheong, N. P. Ong, and B. Batlogg, Phys. Rev. Lett. 77, 2041 (1996).

    [8] A. Gupta, G. Q. Gong, Gang Xiao, P. R. Duncombe, P. Lecoeur, P. Trouilloud, Y. Y. Wang, V. P. Dravid, and J. Z. Sun, Phys. Rev. B 54, R15629 (1996).

    [9] N. D. Mathur et al., Nature 387, 266 (1997).

    [10] J. Klein, C. H¨ofener, S. Uhlenbruck, L. Alff, B. Bu¨chner and R. Gross, Europhys. Lett. 47, 371 (1999).

  • Metrics
Share - Bookmark