publication . Preprint . Article . 2009

Quantum size effects on spin-tunneling time in a magnetic resonant tunneling diode

Alireza Saffarzadeh; Reza Daqiq;
Open Access English
  • Published: 15 Oct 2009
We study theoretically the quantum size effects of a magnetic resonant tunneling diode (RTD) with a (Zn,Mn)Se dilute magnetic semiconductor layer on the spin-tunneling time and the spin polarization of the electrons. The results show that the spin-tunneling times may oscillate and a great difference between the tunneling time of the electrons with opposite spin directions can be obtained depending on the system parameters. We also study the effect of structural asymmetry which is related to the difference in the thickness of the nonmagnetic layers. It is found that the structural asymmetry can greatly affect the traversal time and the spin polarization of the el...
arXiv: Condensed Matter::Strongly Correlated Electrons
free text keywords: Condensed Matter - Mesoscale and Nanoscale Physics, General Physics and Astronomy, Resonant-tunneling diode, Physics, Spin polarization, Spin-½, Quantum tunnelling, Spin polarized scanning tunneling microscopy, Condensed matter physics, Electron, Diode, Magnetic semiconductor, Nuclear magnetic resonance
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