publication . Other literature type . Article . Conference object . Preprint . 2011

Integrated GaN photonic circuits on silicon (100) for second harmonic generation

Chi Xiong; Tomas Palacios; King Y. Fong; Hong X. Tang; Wolfram H. P. Pernice; Carsten Schuck; K. Ryu;
Open Access
  • Published: 12 May 2011
  • Publisher: The Optical Society
Abstract
We demonstrate second order optical nonlinearity in a silicon architecture through heterogeneous integration of single-crystalline gallium nitride (GaN) on silicon (100) substrates. By engineering GaN microrings for dual resonance around 1560 nm and 780 nm, we achieve efficient, tunable second harmonic generation at 780 nm. The \{chi}(2) nonlinear susceptibility is measured to be as high as 16 plus minus 7 pm/V. Because GaN has a wideband transparency window covering ultraviolet, visible and infrared wavelengths, our platform provides a viable route for the on-chip generation of optical wavelengths in both the far infrared and near-UV through a combination of \{...
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doi: 10.1364/oe.19.010462
Subjects
free text keywords: Atomic and Molecular Physics, and Optics, Physics - Optics, Condensed Matter - Materials Science, Optoelectronics, business.industry, business, Nonlinear optics, Photonics, Infrared, Gallium nitride, chemistry.chemical_compound, chemistry, Far infrared, Silicon, chemistry.chemical_element, Optics, Hybrid silicon laser, Second-harmonic generation, Materials science
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