publication . Article . Preprint . 2010

Analysis of the two-dimensional Datta–Das spin field effect transistor

P. Agnihotri; S. Bandyopadhyay;
Open Access
  • Published: 15 Jan 2010 Journal: Physica E: Low-dimensional Systems and Nanostructures, volume 42, pages 1,736-1,740 (issn: 1386-9477, Copyright policy)
  • Publisher: Elsevier BV
Abstract
An analytical expression is derived for the conductance modulation of a ballistic two dimensional Datta-Das Spin Field Effect Transistor (SPINFET) as a function of gate voltage. Using this expression, we show that the recently observed conductance modulation in a two-dimensional SPINFET structure does not match the theoretically expected result very well. This calls into question the claimed demonstration of the SPINFET and underscores the need for further careful investigation.
Subjects
arXiv: Condensed Matter::Mesoscopic Systems and Quantum Hall Effect
free text keywords: Atomic and Molecular Physics, and Optics, Electronic, Optical and Magnetic Materials, Condensed Matter Physics, Spintronics, Quantum mechanics, Conductance, Field-effect transistor, Resonance, Modulation, Spin-½, Physics, Gate voltage, Condensed Matter - Mesoscale and Nanoscale Physics, Condensed Matter - Other Condensed Matter
Related Organizations

[1] S. Datta and B. Das, Appl. Phys. Lett., 56, 665 (1990).

[2] H. C. Koo, J. H. Kwon, J. Eom, J. Chang, S. H. Han and M. Johnson, Science, 325, 1515 (2009).

[3] S. Bandyopadhyay, arXiv:cond-mat/0911.0210.

[4] S. Datta, private communication.

[5] F. Capasso, S. Sen, F. Beltram and A. Y. Cho, in Physics of Quantum Electron Devices, Springer Series in Electronics and Photonics, Vol. 28, Ed. F. Capasso, (Springer-Verlag, Berlin-Heidelberg, 1990), Chapter 7.

[6] A. N. M. Zainuddin, S. Hong, L. Siddiqui and S. Datta, arXiv:condmat/1001:1523.

[7] M. Cahay and S. Bandyopadhyay, Phys. Rev. B., 68, 115316 (2003).

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publication . Article . Preprint . 2010

Analysis of the two-dimensional Datta–Das spin field effect transistor

P. Agnihotri; S. Bandyopadhyay;