publication . Preprint . 2013

Intrinsic graphene field effect transistor on amorphous carbon films

Tinchev, Savcho;
Open Access English
  • Published: 21 Nov 2013
Fabrication of graphene field effect transistor is described which uses an intrinsic graphene on the surface of as deposited hydrogenated amorphous carbon films. Ambipolar characteristic has been demonstrated typical for graphene devices, which changes to unipolar characteristic if the surface graphene was etched in oxygen plasma. Because amorphous carbon films can be growth easily, with unlimited dimensions and no transfer of graphene is necessary, this can open new perspective for graphene electronics.
free text keywords: Condensed Matter - Mesoscale and Nanoscale Physics, Condensed Matter - Materials Science
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