Electron-Hole Asymmetry of Spin Injection and Transport in Single-Layer Graphene

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Han, Wei ; Wang, W. H. ; Pi, K. ; McCreary, K. M. ; Bao, W. ; Li, Yan ; Miao, F. ; Lau, C. N. ; Kawakami, R. K. (2009)
  • Related identifiers: doi: 10.1103/PhysRevLett.102.137205
  • Subject: Condensed Matter - Mesoscale and Nanoscale Physics | Condensed Matter - Materials Science
    arxiv: Computer Science::Programming Languages | Condensed Matter::Strongly Correlated Electrons | Condensed Matter::Materials Science | Condensed Matter::Mesoscopic Systems and Quantum Hall Effect

Spin-dependent properties of single-layer graphene (SLG) have been studied by non-local spin valve measurements at room temperature. Gate voltage dependence shows that the non-local magnetoresistance (MR) is proportional to the conductivity of the SLG, which is the predicted behavior for transparent ferromagnetic/nonmagnetic contacts. While the electron and hole bands in SLG are symmetric, gate voltage and bias dependence of the non-local MR reveal an electron-hole asymmetry in which the non-local MR is roughly independent of bias for electrons, but varies significantly with bias for holes.
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