Electron-Hole Asymmetry of Spin Injection and Transport in Single-Layer Graphene
Wang, W. H.
McCreary, K. M.
Lau, C. N.
Kawakami, R. K.
Condensed Matter - Mesoscale and Nanoscale Physics | Condensed Matter - Materials Science
arxiv: Computer Science::Programming Languages | Condensed Matter::Strongly Correlated Electrons | Condensed Matter::Materials Science | Condensed Matter::Mesoscopic Systems and Quantum Hall Effect
Spin-dependent properties of single-layer graphene (SLG) have been studied by non-local spin valve measurements at room temperature. Gate voltage dependence shows that the non-local magnetoresistance (MR) is proportional to the conductivity of the SLG, which is the predicted behavior for transparent ferromagnetic/nonmagnetic contacts. While the electron and hole bands in SLG are symmetric, gate voltage and bias dependence of the non-local MR reveal an electron-hole asymmetry in which the non-local MR is roughly independent of bias for electrons, but varies significantly with bias for holes.