publication . Preprint . 2009

Electron-Hole Asymmetry of Spin Injection and Transport in Single-Layer Graphene

Han, Wei; Wang, W. H.; Pi, K.; McCreary, K. M.; Bao, W.; Li, Yan; Miao, F.; Lau, C. N.; Kawakami, R. K.;
Open Access English
  • Published: 05 Mar 2009
Abstract
Spin-dependent properties of single-layer graphene (SLG) have been studied by non-local spin valve measurements at room temperature. Gate voltage dependence shows that the non-local magnetoresistance (MR) is proportional to the conductivity of the SLG, which is the predicted behavior for transparent ferromagnetic/nonmagnetic contacts. While the electron and hole bands in SLG are symmetric, gate voltage and bias dependence of the non-local MR reveal an electron-hole asymmetry in which the non-local MR is roughly independent of bias for electrons, but varies significantly with bias for holes.
Subjects
arxiv: Computer Science::Programming LanguagesCondensed Matter::Strongly Correlated ElectronsCondensed Matter::Materials ScienceCondensed Matter::Mesoscopic Systems and Quantum Hall Effect
free text keywords: Condensed Matter - Mesoscale and Nanoscale Physics, Condensed Matter - Materials Science
Download from
Powered by OpenAIRE Open Research Graph
Any information missing or wrong?Report an Issue