publication . Article . Preprint . 2014

Direct observation of the leakage current in epitaxial diamond Schottky barrier devices by conductive-probe atomic force microscopy and Raman imaging

J Alvarez; M Boutchich; J P Kleider; T Teraji; Y Koide;
Open Access English
  • Published: 01 Sep 2014
  • Publisher: HAL CCSD
  • Country: France
Abstract
International audience; The origin of the high leakage current measured in several vertical-type diamond Schottky devices is conjointly investigated by conducting probe atomic force microscopy (CP-AFM) and confocal micro-Raman/Photoluminescence (PL) imaging analysis. Local areas characterized by a strong decrease of the local resistance (5-6 orders of magnitude drop) with respect to their close surrounding have been identified in several different regions of the sample surface. The same local areas, also referenced as electrical hot-spots, reveal a slightly constrained diamond lattice and three dominant Raman bands in the low-wavenumber region (590, 914 and 1040...
Subjects
free text keywords: [PHYS]Physics [physics], Condensed Matter - Materials Science, Acoustics and Ultrasonics, Electronic, Optical and Magnetic Materials, Surfaces, Coatings and Films, Condensed Matter Physics, Charge carrier, Photoluminescence, Diamond cubic, Electrical conductor, Leakage (electronics), Optoelectronics, business.industry, business, Schottky diode, Diamond, engineering.material, engineering, Schottky barrier, Analytical chemistry, Physics
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publication . Article . Preprint . 2014

Direct observation of the leakage current in epitaxial diamond Schottky barrier devices by conductive-probe atomic force microscopy and Raman imaging

J Alvarez; M Boutchich; J P Kleider; T Teraji; Y Koide;