publication . Article . Preprint . 2014

Direct observation of the leakage current in epitaxial diamond Schottky barrier devices by conductive-probe atomic force microscopy and Raman imaging

José Alvarez; Mohamed Boutchich; Jean-Paul Kleider; Tokuyuki Teraji; Yasuo Koide;
Open Access
  • Published: 01 Sep 2014 Journal: Journal of Physics D: Applied Physics, volume 47, page 355,102 (issn: 0022-3727, eissn: 1361-6463, Copyright policy)
  • Publisher: IOP Publishing
  • Country: France
Abstract
International audience; The origin of the high leakage current measured in several vertical-type diamond Schottky devices is conjointly investigated by conducting probe atomic force microscopy (CP-AFM) and confocal micro-Raman/Photoluminescence (PL) imaging analysis. Local areas characterized by a strong decrease of the local resistance (5-6 orders of magnitude drop) with respect to their close surrounding have been identified in several different regions of the sample surface. The same local areas, also referenced as electrical hot-spots, reveal a slightly constrained diamond lattice and three dominant Raman bands in the low-wavenumber region (590, 914 and 1040...
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Subjects
free text keywords: Acoustics and Ultrasonics, Electronic, Optical and Magnetic Materials, Surfaces, Coatings and Films, Condensed Matter Physics, Condensed Matter - Materials Science, [PHYS]Physics [physics], Leakage (electronics), Schottky barrier, Diamond, engineering.material, engineering, Optoelectronics, business.industry, business, Charge carrier, Schottky diode, Materials science, Electrical conductor, Diamond cubic, Photoluminescence
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