publication . Preprint . Other literature type . Article . 2016

Faraday cage angled-etching of nanostructures in bulk dielectrics

Pawel Latawiec; Michael J. Burek; Young-Ik Sohn; Marko Loncar;
Open Access English
  • Published: 01 Jul 2016
For many emerging optoelectronic materials, heteroepitaxial growth techniques do not offer the same high material quality afforded by bulk, single-crystal growth. However, the need for optical, electrical, or mechanical isolation at the nanoscale level often necessitates the use of a dissimilar substrate, upon which the active device layer stands. Faraday cage angled-etching (FCAE) obviates the need for these planar, thin-film technologies by enabling in-situ device release and isolation through an angled-etching process. By placing a Faraday cage around the sample during inductively-coupled plasma reactive ion etching (ICP-RIE), the etching plasma develops an e...
Persistent Identifiers
free text keywords: Condensed Matter - Mesoscale and Nanoscale Physics, Reactive-ion etching, Optoelectronics, business.industry, business, Inductively coupled plasma, Nanotechnology, Faraday cage, law.invention, law, Chemistry, Equipotential, Etching, Nanostructure, Dielectric, Silicon, chemistry.chemical_element
Funded by
  • Funder: Natural Sciences and Engineering Research Council of Canada (NSERC)
NSF| NNIN: National Nanotechnology Infrastructure Network
  • Funder: National Science Foundation (NSF)
  • Project Code: 0335765
  • Funding stream: Directorate for Engineering | Division of Electrical, Communications & Cyber Systems
NSF| Graduate Research Fellowship Program (GRFP)
  • Funder: National Science Foundation (NSF)
  • Project Code: 1144152
  • Funding stream: Directorate for Education & Human Resources | Division of Graduate Education
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