Effects of extrinsic point defects in phosphorene: B, C, N, O and F Adatoms

Preprint English OPEN
Wang, Gaoxue; Pandey, Ravindra; Karna, Shashi P.;
  • Related identifiers: doi: 10.1063/1.4919389
  • Subject: Physics - Chemical Physics | Condensed Matter - Materials Science

Phosphorene is emerging as a promising 2D semiconducting material with a direct band gap and high carrier mobility. In this paper, we examine the role of the extrinsic point defects including surface adatoms in modifying the electronic properties of phosphorene using de... View more
Share - Bookmark