Analysis of Strain and Intermixing in a Single Layer Ge/Si dots using polarized Raman Spectroscopy

Article English OPEN
PEROVA, TANIA; MOORE, ROBERT;
(2006)
  • Related identifiers: doi: 10.1103/PhysRevB.73.075322
  • Subject: Mechanical and Manufacturing Engineering
    acm: GeneralLiterature_REFERENCE(e.g.,dictionaries,encyclopedias,glossaries)

The built-in strain and composition of as-grown and Si-capped single layers of Ge?Si dots grown at various temperatures (460?800 ?C) are studied by a comparative analysis of the Ge-Ge and Si-Ge modes in the polarized Raman spectra of the dots. A pronounced reduction of... View more
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