Photoconductive infrared excitation spectrum of GaP diode wafers and application as an infrared imaging system

Article English OPEN
Moser, K.; Brechter, M.; Prettl, Wilhelm;
(1987)
  • Publisher: Kluwer
  • Related identifiers: doi: 10.1007/BF01117768
  • Subject: 530 Physik | ddc:530
    arxiv: Condensed Matter::Materials Science | Condensed Matter::Mesoscopic Systems and Quantum Hall Effect

The photoconductive excitation spectrum of GaP:N (ZnTe) diodes was measured irradiating the samples from p- and n-side unter forward and reverse bias conditions. The ionization thresholds of S and Te donors as well as transitions from their ground states to excited boun... View more
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