publication . Article . 1987

Photoconductive infrared excitation spectrum of GaP diode wafers and application as an infrared imaging system

K. Moser; M. Brechter; W. Prettl;
Open Access English
  • Published: 01 Jan 1987
  • Publisher: Kluwer
  • Country: Germany
Abstract
The photoconductive excitation spectrum of GaP:N (ZnTe) diodes was measured irradiating the samples from p- and n-side unter forward and reverse bias conditions. The ionization thresholds of S and Te donors as well as transitions from their ground states to excited bound levels with subsequent ionization by the electric field could be seen. The observed minima in the continuum above the ionization threshold are due to phonon assisted fast recombination. The photoconductive signal by irradiation from the p-side is greater and sets on at lower photon energies. In addition, the transmission spectrum was also investigated and interpreted. The green photoluminescence...
Subjects
arXiv: Condensed Matter::Materials ScienceCondensed Matter::Mesoscopic Systems and Quantum Hall Effect
free text keywords: 530 Physik, ddc:530, Instrumentation, Electrical and Electronic Engineering, Radiation, Condensed Matter Physics, Optics, business.industry, business, Nuclear magnetic resonance, Infrared, Phonon, Physics, Photoluminescence, Optoelectronics, Photoconductivity, Excitation, Diode, Ionization, Excited state
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publication . Article . 1987

Photoconductive infrared excitation spectrum of GaP diode wafers and application as an infrared imaging system

K. Moser; M. Brechter; W. Prettl;