publication . Article . 2008

Dependence of the saturated light-induced defect density on macroscopic properties of hydrogenated amorphous silicon

Park, H. R.; Liu, J. Z.; Roca i Cabarrocas, P.; Maruyama, A.; Isomura, M.; Wagner, S.; Abelson, J. R.; Finger, F.;
Open Access English
  • Published: 05 Aug 2008
  • Country: Switzerland
We report a study of the saturated light-induced defect density <i>N</i><sub>s,sat</sub> in 37 hydrogenated (and in part fluorinated) amorphous silicon [<i>a</i>-Si:H(F)] films grown in six different reactors under widely different conditions. <i>N</i><sub>s,sat</sub> was attained by exposing the films to light from a krypton ion laser (λ=647.1 nm). <i>N</i><sub>s,sat</sub> is determined by the constant photocurrent method and lies between 5×10<sup>16</sup> and 2×10<sup>17</sup> cm<sup>−3</sup>. <i>N</i><sub>s,sat</sub> drops with decreasing optical gap <i>E</i><sub>opt</sub> and hydrogen content <i>c</i><sub>H</sub>, but is not correlated with the initial defec...
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