publication . Doctoral thesis . 2002

Advanced circuit design of gigabit density ferroelectric random access memories

Rickes, Jürgen Thomas;
Open Access English
  • Published: 01 Jan 2002
  • Publisher: Publikationsserver der RWTH Aachen University
  • Country: Germany
Abstract
The thesis deals with the circuit design of ferroelectric memory chips - called FeRAMs (ferroelectric random access memories). Regular circuits and techniques used in today's FeRAMs are examined for their suitability for use in future FeRAMs. New circuits and techniques are also presented. Some of these have been used in two memory chips which were developed within the framework of this thesis. The memory cell of a FeRAM is similar to one found in DRAM, since both use a capacitor to store information. In the case of FeRAM it is a ferroelectric and not a dielectric capacitor. Ferroelectric capacitors show hysteretic behavior between applied voltage and resulting ...
Subjects
free text keywords: Ingenieurwissenschaften, FeRAM, ferroelectric memories, ddc:620
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