Fatigue und Imprint an ferroelektrischen Dünnschichten

Doctoral thesis German OPEN
Bräuhaus, Dennis;
(2011)
  • Publisher: Publikationsserver der RWTH Aachen University
  • Subject: Ferroelektrizität | FRAM <Informatik> | Alterung | PZT | Modellierung | Ingenieurwissenschaften | Fatigue | Imprint | FeRAM | CMOS
    • ddc: ddc:620

Ferroelectric random access memory (FeRAM) is because of its combination of non-volatile data storage and low-energy operation a promising device to provide large scale, high-speed memories for mobile applications. Using a similar architecture as conventional DRAM memor... View more
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