publication . Doctoral thesis . 2011

Fatigue und Imprint an ferroelektrischen Dünnschichten

Bräuhaus, Dennis;
Open Access German
  • Published: 01 Jan 2011
  • Publisher: Publikationsserver der RWTH Aachen University
Abstract
Ferroelectric random access memory (FeRAM) is because of its combination of non-volatile data storage and low-energy operation a promising device to provide large scale, high-speed memories for mobile applications. Using a similar architecture as conventional DRAM memory devices, FeRAM utilizes a ferroelectric material instead of a pure dielectric material with its storage capacitor. In order to create a new and more comprehensive model for the ferroelectric fatigue, PZT samples on electrode made of Platinum, IrO2 and SrRuO3 were thoroughly investigated. Besides the influence of amplitude, frequency and signal shape on the loss of polarization, ways to renew the...
Subjects
free text keywords: Ferroelektrizität, FRAM <Informatik>, Alterung, PZT, Modellierung, Ingenieurwissenschaften, Fatigue, Imprint, FeRAM, CMOS, ddc:620
Powered by OpenAIRE Open Research Graph
Any information missing or wrong?Report an Issue