A numerical simulation model of valence-change-based resistive switching

Doctoral thesis English OPEN
Marchewka, Astrid;
  • Related identifiers: doi: 10.18154/RWTH-2017-05849
  • Subject: Elektronisches Bauelement | Finite-Volumen-Methode | Ingenieurwissenschaften | Nichtfl├╝chtiger Speicher | ReRAM | Simulationsmodell | drift-diffusion model | finite volume method | nonvolatile memory | resistive switching | simulation model
    • ddc: ddc:621.3

Due to their superior scalability and performance, nanoscale resistive switches based on the valence-change mechanism are considered promising candidates for future nonvolatile memory and logic applications. These devices are metal-oxide-metal structures that can be rev... View more
Share - Bookmark