Electrical compensation by Ga vacancies in Ga2O3  thin films

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Korhonen, Esa; Tuomisto, F.; Gogova, D.; Wagner, G.; Baldini, M.; Galazka, Z.; Schewski, R.; Albrecht, M.;
  • Related identifiers: doi: 10.1063/1.4922814
  • Subject: 114 Physical sciences | 221 Nanotechnology | 214 Mechanical engineering | 218 Environmental engineering | Ga2O3 | positron | vacancy

The authors have applied positron annihilation spectroscopy to study the vacancy defects in undoped and Si-doped Ga2O3 thin films. The results show that Ga vacancies are formed efficiently during metal-organic vapor phase epitaxy growth of Ga2O3 thin films. Their concen... View more
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