Infrared absorption of hydrogen-related defects in ammonothermal GaN

Article English OPEN
Suihkonen, Sami; Pimputkar, Siddha; Speck, James S.; Nakamura, Shuji;
(2016)
  • Related identifiers: doi: 10.1063/1.4952388
  • Subject: 213 Electronic, automation and communications engineering, electronics | GALLIUM-NITRIDE | CRYSTALS | COMPLEXES | GROWTH

Polarization controlled Fourier transform infrared (FTIR) absorption measurements were performed on a high quality m-plane ammonothermal GaN crystal grown using basic chemistry. The polarization dependence of characteristic absorption peaks of hydrogen-related defects a... View more
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