High-rate deposition of SI absorber layers by electron beam evaporation and first electron beam crystallization tests

Conference object English OPEN
Saager, Stefan; Ben Yaala, Marwa; Heinß, Jens-Peter; Temmler, Dietmar; Pfefferling, Bert; Metzner, Christoph;
  • Related identifiers: doi: 10.4229/EUPVSEC20142014-3DV.4.13
  • Subject: electron beam evaporation | silicon thin films | high deposition rate | amorphous silicon | electron beam crystallization

In earlier electron beam physical vapor deposition tests (EB-PVD), using a conventional copper crucible (A), high Si deposition rates at relatively high EB power together with a contamination level of 1016 cm-3 are demonstrated. To improve the rate vs. EB power relation... View more
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