High-rate deposition of SI absorber layers by electron beam evaporation and first electron beam crystallization tests
Saager, Stefan; Ben Yaala, Marwa; Heinß, Jens-Peter; Temmler, Dietmar; Pfefferling, Bert; Metzner, Christoph;
Related identifiers: - Subject: electron beam evaporation | silicon thin films | high deposition rate | amorphous silicon | electron beam crystallization
In earlier electron beam physical vapor deposition tests (EB-PVD), using a conventional copper crucible (A), high Si deposition rates at relatively high EB power together with a contamination level of 1016 cm-3 are demonstrated. To improve the rate vs. EB power relation... View more