Process informed accurate compact modelling of 14-nm FinFET variability and application to statistical 6T-SRAM simulations

Conference object English CLOSED
Wang, Xingsheng; Reid, Dave; Wang, Liping; Millar, Campbell; Burenkov, Alex; Evanschitzky, Peter; Baer, Eberhard; Lorenz, Juergen; Asenov, Asen;
  • Related identifiers: doi: 10.1109/SISPAD.2016.7605207
  • Subject: design technology co-optimization | FinFET | process | process variation | SRAM | statistical variability

This paper presents a TCAD based design technology co-optimization (DTCO) process for 14nm SOI FinFET based SRAM, which employs an enhanced variability aware compact modeling approach that fully takes process and lithography simulations and their impact on 6T-SRAM layou... View more
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