publication . Article . 2006

Optical and electrical properties of Te doped AlGaAsSb/AlAsSb Bragg mirrors on InP

Toginho Filho, D. O.; Dias, I. F. L.; Duarte, J. L.; Laureto, E.; Jean-Christophe Harmand;
Open Access
  • Published: 01 Dec 2006 Journal: Brazilian Journal of Physics, volume 36, pages 1,250-1,256 (issn: 0103-9733, Copyright policy)
  • Publisher: FapUNIFESP (SciELO)
Abstract
We present a comparative study carried out on the optical and electrical characteristics of undoped and Te doped AlGaAsSb/AlAsSb Bragg mirrors with 6.5 pairs of layers and bulk undoped and Te doped AlGaAsSb epilayers alloys lattice matched on InP, grown by molecular beam epitaxy, using SIMS, photoluminescence, reflectivity and IxV techniques. The temperature dependence of PL transitions observed in the Bragg mirrors are similar to that observed in bulk samples and associated with the donor and acceptor recombinations in alloys with electrostatic potential fluctuations described by quasi-donor-acceptor-pair (QDAP) models. We verified by SIMS the presence of a mac...
Subjects
arXiv: Condensed Matter::Materials SciencePhysics::OpticsCondensed Matter::SuperconductivityCondensed Matter::Strongly Correlated Electrons
free text keywords: Bragg mirror, AlGaAs/AlAsSb, Semiconductor, business.industry, business, Condensed matter physics, Distributed Bragg reflector, Vertical-cavity surface-emitting laser, Alloy, engineering.material, engineering, Optoelectronics, Molecular beam epitaxy, Acceptor, Photoluminescence, Physics, Doping
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publication . Article . 2006

Optical and electrical properties of Te doped AlGaAsSb/AlAsSb Bragg mirrors on InP

Toginho Filho, D. O.; Dias, I. F. L.; Duarte, J. L.; Laureto, E.; Jean-Christophe Harmand;