publication . Other literature type . Conference object . 2010

Molecular Models for DSMC Simulations of Metal Vapor Deposition

A. Venkattraman; A. A. Alexeenko;
Open Access
  • Published: 01 Jan 2010
  • Publisher: Purdue University
  • Country: United States
Abstract
The direct simulation Monte Carlo (DSMC) method is applied here to model the electron‐beam (e‐beam) physical vapor deposition of copper thin films. A suitable molecular model for copper‐copper interactions have been determined based on comparisons with experiments for a 2D slit source. The model for atomic copper vapor is then used in axi‐symmetric DSMC simulations for analysis of a typical e‐beam metal deposition system with a cup crucible. The dimensional and non‐dimensional mass fluxes obtained are compared for two different deposition configurations with non‐uniformity as high as 40% predicted from the simulations.
Subjects
arXiv: Physics::Accelerator PhysicsCondensed Matter::Superconductivity
free text keywords: Engineering, Copper, chemistry.chemical_element, chemistry, Thin film, Crucible, Monte Carlo method, Direct simulation Monte Carlo, Chemical vapor deposition, Physical vapor deposition, Molecular physics, Surface coating, Statistical physics
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publication . Other literature type . Conference object . 2010

Molecular Models for DSMC Simulations of Metal Vapor Deposition

A. Venkattraman; A. A. Alexeenko;