Optical and Electrical Characterization of InGaAsN used for 1.3 µm lasers

Doctoral thesis English OPEN
Dumitras, Gheorghe;
(2007)
  • Publisher: Technische Universität München
  • Subject: III-V semiconductor compounds;InGaAsN;GaAsN;VCSEL;MBE growth;thermal annealing;photothermal deflection spectroscopy;time-resolved photoluminescence;surface photovoltage;band offsets;microwave cyclotron resonance | III-V Halbleiterlegierung;InGaAsN;GaAsN;VCSEL;MBE Wachstum;Ausheilen;PDS;zeitaufgelöste Photolumineszenz;Photospannung;Bandoffsets;Zyklotronresonanz | Physik
    • ddc: ddc:530

This work represents a study of the quaternary semiconductor alloy InGaAsN, which is used in quantum-well lasers. The optical part deals with absorption as well as normal and time-resolved photoluminescence. The results of this part are used for the optimization of InGa... View more
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