Mid-infrared Ge-on-Si electro-absorption modulator

Conference object English OPEN
Li, Tiantian; Nedeljković, Milos; Hattasan, Nannicha; Khokhar, Ali Z.; Reynolds, Scott A.; Stanković, Stevan; Banakar, Mehdi; Cao, Wei; Qu, Zhibo; Littlejohns, Callum G.; Soler Penadés, Jordi; Grabska, Katarzyina; Mastronardi, Lorenzo; Thomson, David J.; Gardes, Frederic Y.; Reed, Graham T.; Wu, Hequan; Zhou, Zhiping; Mashanovich, Goran Z.;
(2017)

<p>We present the first waveguide electro-absorption modulator in germanium-on-silicon material platform at 3.8 μm wavelength, based on free-carrier injection into a straight waveguide. The fabricated 1 mm long device has modulation depth of &gt;35 dB at 7 V.</p>
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