Impact of substrate temperature on the incorporation of carbon-related defects and mechanism for semi-insulating behavior in GaN grown by molecular beam epitaxy

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Armstrong, A; Poblenz, C; Green, D S; Mishra, U K; Speck, J S; Ringel, S A;
(2006)
  • Publisher: eScholarship, University of California
  • Subject:
    arxiv: Condensed Matter::Materials Science

The electrical conductivity and deep level spectrum of GaN grown by molecular beam epitaxy and codoped with carbon and silicon were investigated for substrate temperatures T-s of 650 and 720 degrees C as a function relative carbon and silicon doping levels. With suffici... View more
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