InGaAsN as absorber in APDs for 1.3 micron wavelength applications

Conference object English OPEN
Ng, JS; Tan, SL; Goh, YL; Tan, CH; David, JPR; Allam, J; Sweeney, SJ; Adams, AR;
(2010)

Two issues with using InGaAsN as absorber in avalanche photodiodes (APDs) for 1310nm wavelength applications are addressed here. Firstly, we demonstrated InGaAsN p-i-n diodes with stable photoresponse around 1310nm but reverse leakage current density slightly above the ... View more
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