Reduction of dark current and unintentional background doping in InGaAsN photodetectors by ex situ annealing

Conference object English OPEN
Tan, SL; Tan, LJJ; Goh, YL; Zhang, S; Ng, JS; David, JPR; Marko, IP; Allam, J; Sweeney, SJ; Adams, AR;
(2010)

InGaAsN is a promising material system to enable low-cost GaAs-based detectors to operate in the telecommunication spectrum, despite the problems posed by the low growth temperature required for nitrogen incorporation. We demonstrate that InGaAsN p+-i-n+ structures with... View more
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