Pressure‐Induced Formation of Quaternary Compound and In−N Distribution in InGaAsN Zincblende from Ab Initio Calculation

Article English OPEN
Pluengphon, Prayoonsak; Wanarattikan, Pornsiri; Bovornratanaraks, Thiti; Inceesungvorn, Burapat;

Abstract We present the effects of In−N distribution and high pressure on the zincblende phase (0–5 GPa) of InxGa1−xAs0.963N0.037 (x=0.074, 0.111 and 0.148). Structural, electronic, and optical properties are analyzed, and it is found that non‐isotropic distribution of ... View more
Share - Bookmark